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Friday 21st February 2003
Researchers have used the highly conductive surface layer induced in diamond by hydrogen termination to create in-plane gate transistors (Applied Physics Letters, February 10, 2003). Oxidised lines of 100nm blocked of leakage current down to 0.3pA/micron at 100V at room temperature.
Friday 21st February 2003
TriQuint Semiconductor has completed a 1100m2 test facility in Tianjin, China. Sawtek, a TriQuint subsidiary, will operate the plant, providing assembly, test, mark, tape and reel support for cellphone products. TriQuint began construction on the facility in November 2002.
Friday 21st February 2003
Mattson Technology has signed a definitive agreement to sell its Wet Products division to SCP Global Technologies, a wet processing equipment provider. The sale is subject to certain conditions with closure due Q1 2003. As part of the transaction, Mattson Technology will retain the rights to all future royalty and settlement payments under a legal agreement with Dainippon Screen Manufacturing.
Friday 21st February 2003
JMAR Technologies is to reorganise and sell some operations. JMAR Research, JMAR/SAL NanoLithography, and JMAR Semiconductor will be merged into one corporation with three divisions (Research, Systems and Microelectronics, respectively). JMAR Precision Systems - a motion and metrology equipment manufacturing operation - will be sold.
Friday 21st February 2003
IC Insights is forecasting an average annual growth rate for the compound semiconductor IC market of 22% for the period 2002-2007. The expectation for the total IC market is 10% for the same duration.
Friday 21st February 2003
US cleanroom environment supplier Daw Technologies and its sister company Daw Process Systems have opened a new office in South Wales, UK.
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Friday 21st February 2003
University of Illinois at Chicago (UIC) researchers have developed a method for growing conducting polymers called Surface Polymerisation of Ion-Assisted Deposition or SPIAD (Journal of the American Chemical Society, online since February 6 and in print March 5, 2003).
Friday 21st February 2003
French microsystem supplier MEMSCAP announced a global reorganisation "in order to better adapt and react to the market evolution". The company is hoping to achieve positive earnings before interest and tax from Q4 this year.
Friday 21st February 2003
The Europractice IC Service has launched a service that it says reduces the minimum for fabrication costs by a factor of up to ten. The new [email protected] programme will enable universities and research laboratories worldwide to fabricate very small designs at a cost of a few hundred euro.
Thursday 20th February 2003
Infineon Technologies and Saifun Semiconductors of Israel have set up Infineon Technologies Flash GmbH & Co. KG to develop Flash memory products. The joint venture has plans to integrate DRAM and Flash expertise. Infineon Flash stems from the Ingentix joint venture set up in 2001 by Infineon and Saifun. Infineon now holds 70% of the joint venture with headquarters in Dresden, Germany. As a result it is expected that 40 new jobs will be created in the area.
Thursday 20th February 2003
DRAM companies have been announcing chips and modules compliant with the double data rate 400Mbits/sec (DDR400) specification. Among the chip manufacturers with DDR400 products are Germanys Infineon Technologies, South Koreas Samsung and Hynix and Japans Elpida (former joint venture of NEC and Hitachi).
Thursday 20th February 2003
Researchers from Munich-based universities and from German chemical company Covion have developed a class of electroluminescent (EL) polymers that can be patterned in a way similar to standard lithography photoresists (Nature, February 20, 2003). In other words, the polymer is spin coated onto a substrate and then photographically patterned and processed.
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Wednesday 19th February 2003
Shipley opened a $30mn advanced technology centre in Massachusetts dedicated to the development of lithography, interconnect, low-k dielectric and other critical materials needed to produce the newest generations of microelectronic devices.
Wednesday 19th February 2003
SEMIs book-to-bill ratio for North American semiconductor equipment suppliers was 0.92 in January 2003 (preliminary).
Wednesday 19th February 2003
The organic semiconductor segment is poised for rapid growth over the next five years. This comprehensive study evaluates the commercial prospects for organic semiconductors, based on a realistic understanding of the technical capabilities of these materials, and identifies many new and exciting opportunities for semiconductor manufacturers and suppliers, as well as print machinery and polymer developers. This report seeks to separate real growth opportunities from hyperbole, analysing the technical and market challenges facing organic semiconductor devices and new opportunities for suppliers. It combines a comprehensive assessment of secondary data with a major new primary research survey of industry leaders to produce the most comprehensive study of the emerging organic semiconductor market to date. ***CLICK ON OUR MAIN ADVERT AND DOWNLOAD A COPY OF THE BROCHURE WITH FULL CONTENTS LISTING AND ORDER FORM*** About Pira International Pira International is an independent publishing house, conference organiser and research organisation specialising in graphic arts, media and technology-led industries. Pira was established over 70 years ago and is based just outside London. Our market reports are based on extensive primary research projects and provide customers with quantitative market forecasts and value-added analysis.
Wednesday 19th February 2003
Intel plans to convert its 200mm Fab 12 to 300mm production. The facility is located in Arizona. Costs for the conversion project are estimated at $2bn. Construction work is due to begin in H1 2004 with production scheduled for late 2005. The converted fab will start up production on 65nm process technology.
Wednesday 19th February 2003
German company Singulus Technologies has launched a thin-film sputtering system aimed at production of magnetic RAM on 300mm wafers.
Wednesday 19th February 2003
University of California Santa Barbara scientists (Nature, February 6, 2003) have developed a photovoltaic device based on a Schottky diode structure (metal-semiconductor rather than semiconductor-semiconductor junction).
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Wednesday 19th February 2003
International SEMATECH (ISMT) plans to co-ordinate industry-wide studies into the extension of chrome as mask absorber, other materials that could replace it and the economic impacts of both pathways.
Wednesday 19th February 2003
Osram Opto Semiconductors has produced its first optical pumped semiconductor (OPS) disk laser prototype. The company says that for the first time its developers have achieved an 8W optical output power with an optical pumping power of 19W at a wavelength of 980nm.
Tuesday 18th February 2003
Agilent Technologies has agreed to buy the intellectual property and certain other assets of Pixel Devices International, a developer of complementary metal oxide semiconductor (CMOS) image sensors. Upon the close of the transaction, Pixels key employees will join Agilents Semiconductor Products Group, including PDIs chief technical officer Boyd Fowler.
Tuesday 18th February 2003
Epitaxial wafer foundry IQE is to cut a further 60 jobs from its staffing, bringing the total to 250. The majority of the redundancies will be at IQE (Europe). The company reports that sales revenues for Q4 2002 are likely to be approximately 5% below the GBP5.6mn reported in the previous quarter.
Tuesday 18th February 2003
Toshiba has developed high-frequency silicon germanium (SiGe) RF transistors that achieve a 0.52dB noise level - the lowest currently available in a SiGe transistor, it is claimed. The transistors are produced on an expitaxial bipolar process.
Tuesday 18th February 2003
Fairchild Semiconductor will supply US optical networking supplier OMM with micro-electro-mechanical system (MEMS) wafers under a long-term production agreement. OMM produces MEMS-based all-optical switching modules.

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