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Thursday 13th March 2003
Indium Corporation will be at Semicon Europa to exhibit a wide range of new and established high performance interconnect products. Distributors are worldwide with manufacturing facilities in USA, UK and Singapore. Indium has been supplying high quality products since 1934. NEW Lead free Chip Attachment Solder CP-6106 & CP6121 are nitrogen reflow, no clean solder pastes with Type 6 (15 – 5) powder, specifically formulated for flip clip attachment. Indium provides type 6 SnAg and SnAgCn lead-free solder powder to be compatible with the flux for excellent stencil release for ultra-fine pitch printing. Flip Chip Epoxy Fluxes PK-001 and PK-002 are Halide Free No-Clean fluxes for Flip Chip or CSP soldering, designed for use with Sn62 and Sn63 Eutectic Solders. They provide a powerful metal surface, oxide cleaning capability during reflow and help good soldering. Benefits include compatibility with standard underfill materials and conformal coating. PK-001 and PK-002 are VOC free and environmentally friendly. Precision Spheres Indium has for many years manufactured spheres with highly accurate diameters, bright shiny surfaces and highly spherical shapes. SPC supports sphere production. All spheres are made from pure metals, which combine to produce exact alloy compositions and are classified for size in an automated, high capacity process for smooth bright surfaces. A wide variety of alloys and sizes are available. Interconnect Flux WS-363 - Water-soluble, Halide-free for BGA bumps W-363 Interconnect Flux is a high viscosity paste-type flux for use in high yield BGA bumping, board level attachment and rework. Benefits include excellent cleanability. Residues are removed at room temperature with DI water. Also stencil printable with high tack, Halide-free with excellent solderability. Support Products from Indium Indium supplies a full range of chip-scale assembly products, including TACFLUX™ high viscosity fluxes to hold spheres in place during the attachment process, our patented INTEGRATED™ Solder Preform Arrays for BGA fabrication and repair applications. Flip Chip Fluxes, Die Attach Adhesives and a full range of solder pastes for attachment and bumping applications. Visit SEMICON Europa booth A1.621 or our website www.indium.com We look forward to seeing you. If you will not be present at the exhibition, please contact us at: Email : [email protected] Tel : + 44 (0) 1908 580400 Web : www.indium.com
Thursday 13th March 2003
Click Here To Receive 2004 Catalogue... VAT is the worlds largest manufacturer of vacuum valves. Design and manufacture is based in Switzerland. A network of regional customer support, sales and distribution offices are located around the world. VAT employs around 500 people globally. Customer service is the most important focus in all activities within the company. VAT is a well established and key supplier to the Semiconductor Industry. The main product ranges supplied within the industry are Gate Valves, Angle Valves, Adaptive Pressure Control Valves, Wafer Transfer Valves, Edge Welded Bellows and Seals. VAT devotes a high level of resources and people to product innovation and development. With the fast technology cycles within the industry, bringing new products to the market quickly, whilst still ensuring total reliability, with the highest possible level of support is the basis on which VAT have built its excellent reputation on. Gate Valves: High and ultra high vacuum valves from DN16 to DN1000 and above. These valves are typically used for pump isolation or chamber to chamber isolation. Angle Valves: In the size range DN16 to DN160 and above. These valves are used in a variety of applications from gauge and backing line isolation to gas inlet systems and rough pumping. Adaptive Pressure Control Valves: A very wide range of butterfly, gate and pendulum valves for downstream pressure control. Wafer Transfer Valves: Rectangular slit valves typically used to between process chambers and load locks or robot chambers. These valves are available in a range of sizes suiting all standard wafers up to 300mm and larger on request. Edge Welded Bellows: VAT run a bellows manufacturing facility that is able to produce custom bellows to exactly meet each individual requirement. Bellows are produced to either customer drawings or VAT produced drawings. Seals: VAT has nearly 40 years experience with specifying, designing and manufacturing sealing systems. During the last few years many semiconductor processes have become significantly more aggressive in terms of seal degradation. This has led to an ever increasing number of seal compounds being available on the market. VAT has extensive experience in working with these materials. Contact VAT to discuss the valve and sealing requirements for your process. You will be assured of the highest quality solution with the lowest possible cost-of-ownership". Click Here To Receive 2004 Catalogue...
Wednesday 12th March 2003
NuTool has delivered its 300mm LuminaCu integrated system to "a leading European semiconductor manufacturer". The tool is configured with the companys patented Electrochemical Mechanical Deposition (ECMD) and Reverse Linear CMP (RL-CMP) process modules for Cu damascene technology development at the 65nm technology node and beyond.
Wednesday 12th March 2003
RF IC supplier Sirenza Microdevices has received a US patent for a "Microwave Field Effect Transistor Structure on Silicon Carbide" No. 6,521,923. This is Sirenzas first patent for the "silicon on silicon carbide" (SiSiC) class of semiconductors.
Wednesday 12th March 2003
Toshiba is planning to invest JPY350bn in 300mm before March 2007. With other investments, the companys annual spend on semiconductor technology is expected to be JPY130bn. This compares with Toshibas total 2002 spending of JPY204bn and projected investments of JPY840bn in the three years to March 2006.
Wednesday 12th March 2003
The official cornerstone laying ceremony marks progress on Wacker Siltronics new 300mm raw wafer production facility in Freiberg, Germany.
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Wednesday 12th March 2003
Intel plans to push its way into the wireless networking market with its "Centrino" mobile technology. Centrino combines the Pentium M processor, Intels 855 Chipset Family and the Intel PRO/Wireless 2100 Network Connection.
Tuesday 11th March 2003
Amkor Technology and Sharp have agreed to unify the design for 3D system in package assembly for the stacking of very thin packages. Target markets are ASICs, DSPs and memories for cell phones, PDAs, digital still cameras.
Tuesday 11th March 2003
Oxford Instruments Superconductivity is joining the UK Cryogenic Instrumentation for Quantum Electronics Collaboration. The company will supply cryogenic consultancy and an ultra low temperature (ULT) system to enable the extremely low temperature environments essential for research into quantum electronics, quantum computing and quantum nanotechnology.
Tuesday 11th March 2003
US semiconductor equipment developer Silicon Genesis Corporation (SiGen) has successfully developed a new strained silicon method to create high carrier mobility layers. The process is applicable to the fabrication of strained-silicon bulk wafers and strained-silicon silicon-on-insulator (SOI) wafers.
Tuesday 11th March 2003
Hynix Semiconductor introduced what it says is commercially applicable FeRAM (ferroelectric RAM) - a non-volatile, low power, high-density and high-speed memory. Hynix has used the ferroelectric material BLT (bismuth lanthanum titanate).
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Monday 10th March 2003
Cypress Semiconductor achieved functional silicon for highest-density static memory (SRAM) on its six-transistor 90nm RAM9 process technology. The 72Mbit synchronous SRAM is designed to operate at the speeds needed for the OC-48 optical networking standard.
Monday 10th March 2003
Theta 300 provides the perfect solution for characterizing thin films on tomorrows semiconductor devices. Its unique, non-destructive, technology provides dose, distribution, layer thickness, purity, uniformity and composition measurements from any point on the wafer. Not only will it measure elemental compositions but it will also provide chemical state information. It detects the presence, nature and thickness of buried interface layers. Theta 300 measures contaminants in the layer, at the surface and at the interfaces. Theta 300 is ideally suited to the metrology of gate dielectrics, including oxynitrides and newer materials such as hafnium oxide. Theta 300 accommodates wafers up to 300mm and thicker specimens, such as packaged devices. It provides metrology, QC and R&D facilities with a powerful new tool to accelerate the development of tomorrow’s semiconductor devices. Theta 300 can also be configured with an additional, side-mounted transfer chamber for FOUP, cassette, or clean-room applications. Click here for the application form for a copy of the Theta 300 interactive presentation CD.
Monday 10th March 2003
Theta 300 provides the perfect solution for characterizing thin films on tomorrows semiconductor devices. Its unique, non-destructive, technology provides dose, distribution, layer thickness, purity, uniformity and composition measurements from any point on the wafer. Not only will it measure elemental compositions but it will also provide chemical state information. It detects the presence, nature and thickness of buried interface layers. Theta 300 measures contaminants in the layer, at the surface and at the interfaces. Theta 300 is ideally suited to the metrology of gate dielectrics, including oxynitrides and newer materials such as hafnium oxide. Theta 300 accommodates wafers up to 300mm and thicker specimens, such as packaged devices. It provides metrology, QC and R&D facilities with a powerful new tool to accelerate the development of tomorrow’s semiconductor devices. Theta 300 can also be configured with an additional, side-mounted transfer chamber for FOUP, cassette, or clean-room applications. Click here for the application form for a copy of the Theta 300 interactive presentation CD.
Monday 10th March 2003
Established in 1963, TEL played an active role in the early days of the IT revolution. Since the first year of operation, TEL has continued to promote technological innovation and customer success in the semiconductor industry, as well as other high-tech business arenas. TEL offers the most reliable products in the industry by continually strengthening our research and development facilities and core employee base. Our R&D efforts focus on two key objectives: the development of next-generation process technologies, and the constant improvement of equipment reliability and productivity. Our development, manufacturing, marketing, sales, R&D and field engineering groups work collaboratively to provide standard-setting products and service. To persist as the leader in technological innovation, we fine-tune products to fulfill our customers specific needs through evaluation tests and demonstrations. New products and processes are designed in close cooperation with our customers, placing TEL technology on the leading edge and often setting the standards for industry procedures. Our leading product lines include: Oxidation/diffusion; LP-CVD systems Coaters/developers Metrology solutions Cleaning systems Metal PVD systems Metal CVD systems Plasma etch systems Wafer probers The equipment made by TEL enables our customers to transform their concepts into marketable products. In essence, we focus our energy and resources on harnessing technologies that change the world.
Monday 10th March 2003
Hynix Semiconductor introduced what it says is commercially applicable FeRAM (ferroelectric RAM) - a non-volatile, low power, high-density and high-speed memory. Hynix has used the ferroelectric material BLT (bismuth lanthanum titanate).
Monday 10th March 2003
Oxford Instruments Superconductivity is joining the UK Cryogenic Instrumentation for Quantum Electronics Collaboration. The company will supply cryogenic consultancy and an ultra low temperature (ULT) system to enable the extremely low temperature environments essential for research into quantum electronics, quantum computing and quantum nanotechnology.
Info
Monday 10th March 2003
Amkor Technology and Sharp have agreed to unify the design for 3D system in package assembly for the stacking of very thin packages. Target markets are ASICs, DSPs and memories for cell phones, PDAs, digital still cameras.
Monday 10th March 2003
A new in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers with claimed 50% lower rates of burn-in degradation is to be introduced by Bookham Technology at the Optical Fiber Communication Conference and Exposition (OFC) this month (March 2003). The burn-in improvement promises increasing long-term reliability of devices, which also exhibit 20% lower threshold currents. The new process is also compatible with newer aluminium gallium indium arsenide (AlGaInAs) materials.
Monday 10th March 2003
A new in situ etch and regrowth process for uncooled InP buried heterostructure lasers with claimed 50 percent lower rates of burn in degradation is to be introduced by Bookham Technology at the Optical Fiber Communication Conference and Exposition (OFC) this month (March 2003). The burn-in improvement promises increasing long-term reliability of devices, which also exhibit 20 percent lower threshold currents. The new process is also compatible with newer aluminium gallium indium arsenide (AlGaInAs) materials.
Monday 10th March 2003
French president Jacques Chirac inaugurated the Crolles2 Alliance of Philips, Motorola and STMicroelectronics. The joint R&D centre will pioneer CMOS technology from 90nm processes to 32nm over the next five years and also includes a 300mm wafer semiconductor manufacturing pilot line, which is now beginning operation. Taiwan foundry TSMC also has participation in the work in terms of process development and alignment.
Monday 10th March 2003
French president Jacques Chirac inaugurated the Crolles2 Alliance of Philips, Motorola and STMicroelectronics. The joint R&D centre will pioneer CMOS technology from 90nm processes to 32nm over the next five years and also includes a 300mm wafer semiconductor manufacturing pilot line, which is now beginning operation. Taiwan foundry TSMC also has participation in the work in terms of process development and alignment.
Monday 10th March 2003
A new in-situ etch and regrowth process for uncooled InP buried-heterostructure lasers with claimed 50 per cent lower rates of burn-in degradation is to be introduced by Bookham Technology at the Optical Fiber Communication Conference and Exposition (OFC) this month (March 2003). The burn-in improvement promises increasing long-term reliability of devices, which also exhibit 20 percent lower threshold currents. The new process is also compatible with newer aluminium gallium indium arsenide (AlGaInAs) materials.

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