News Article
Altatech Introduces Advanced Materials CVD And ALD Tool
AltaCVD’s unique vaporising technology offers unprecedented new materials deposition capability.
Altatech Semiconductor, a global provider of advanced processes and manufacturing equipments for the semiconductor industry announced the launch of AltaCVD, an advanced materials CVD (Chemical vapour deposition) and ALD (Atomic layer deposition) tool. Based on Altatech's vaporising technology enabling the deposition from new, viscous and non volatiles precursors, AltaCVD offers unique new capabilities to R&D facilities and pilot productions lines.
AltaCVD combines a unique vaporiser technology, chamber design and gas/liquid panel integration. The combination of a proprietary reactor design and precursor introduction path with a pulsed liquid injection and vaporisation enables nanoscale control of thickness, uniformity, composition and stoichiometry in complex materials. These depositions are unavailable today with existing techniques.
AltaCVD is ideally suited for the plasma enhanced MOCVD and ALD processes of a wide range of materials used in logic and memory devices as well as in microsystems and 3D integration, such as : high-K gate dielectrics, metal electrodes, high-K coupling dielectrics and electrodes in MIM and DRAM capacitors, ferroelectric materials, chalcogenide alloys for PCRAM, seedless and self forming copper diffusion barriers, copper seed layers, transparent conductive oxides, thin film batteries electrodes and electrolyte.
“The unique design and technology of AltaCVD is in line with Altatech's product strategy aiming at accelerating the introduction of next materials generation in the semiconductor chain.” says Hervé Monchoix Altatech Technology Director. “With AltaCVD, we offer the best in class, flexible nanodeposition tool to advanced R&D facilities' teams.”
To date, multiple beta versions of AltaCVD systems have already been installed for advanced high-K gate dielectric integration at front end of line R&D facilities and for through silicon via (TSV) metallisation at a back end of line R&D facility.
AltaCVD combines a unique vaporiser technology, chamber design and gas/liquid panel integration. The combination of a proprietary reactor design and precursor introduction path with a pulsed liquid injection and vaporisation enables nanoscale control of thickness, uniformity, composition and stoichiometry in complex materials. These depositions are unavailable today with existing techniques.
AltaCVD is ideally suited for the plasma enhanced MOCVD and ALD processes of a wide range of materials used in logic and memory devices as well as in microsystems and 3D integration, such as : high-K gate dielectrics, metal electrodes, high-K coupling dielectrics and electrodes in MIM and DRAM capacitors, ferroelectric materials, chalcogenide alloys for PCRAM, seedless and self forming copper diffusion barriers, copper seed layers, transparent conductive oxides, thin film batteries electrodes and electrolyte.
“The unique design and technology of AltaCVD is in line with Altatech's product strategy aiming at accelerating the introduction of next materials generation in the semiconductor chain.” says Hervé Monchoix Altatech Technology Director. “With AltaCVD, we offer the best in class, flexible nanodeposition tool to advanced R&D facilities' teams.”
To date, multiple beta versions of AltaCVD systems have already been installed for advanced high-K gate dielectric integration at front end of line R&D facilities and for through silicon via (TSV) metallisation at a back end of line R&D facility.
