News Article
IQE Launches New Epitaxy Services For Enhanced MEMS Capabilities
The company’s dedicated silicon facility, now offers a range of engineered substrates for the emerging MEMS markets in wafer sizes up to 200mm.
IQE, a supplier of semiconductor wafer products and wafer services to the semiconductor industry, announced that it has added an extensive range of new epitaxy services for enhanced MEMS capabilities.
Engineered substrates enable the greatest degree of flexibility in both the design and manufacture of MEMS devices, allowing customers to design their products free of the limitations imposed by standard bulk silicon substrates.
The new enhanced services are suited to technologies based on SOI or bulk silicon wafers and IQE's advanced single wafer reactors offer excellent resistivity and thickness uniformity with tight control of doping and other critical film parameters. Abrupt transitions are possible between differently doped layers and films are free from crystal originating particles and other types of bulk silicon defects.
With 20 years experience in pioneering epitaxy services, IQE works closely with its customers to develop the ideal substrate solution. Epitaxial services for MEMS applications include thick virtual SiGe substrates, thin super lattice structures, SiGe etch stop layers and SiGe epitaxy for applications such as IR sensors.
The new MEMS offering also includes the industry's largest range of materials capabilities with multi-layer Si, SiGe and Ge epitaxy. Different doping levels and species within each layer can also be accommodated as can epitaxial layers on SOI.
Alistair Hoy, Sales Manager for IQE's Silicon Products Division said: "Tailor made substrates that are tuned to customers' specific requirements provide the ideal foundation for next generation MEMS products and avoids the need for compromising design processes to fit the substrates' properties. "Many key players are turning to engineered substrates to facilitate greater flexibility and control over their design and manufacturing processes. The use of epitaxial layers opens up an exciting new range of possibilities for the MEMS technology sector."
Engineered substrates enable the greatest degree of flexibility in both the design and manufacture of MEMS devices, allowing customers to design their products free of the limitations imposed by standard bulk silicon substrates.
The new enhanced services are suited to technologies based on SOI or bulk silicon wafers and IQE's advanced single wafer reactors offer excellent resistivity and thickness uniformity with tight control of doping and other critical film parameters. Abrupt transitions are possible between differently doped layers and films are free from crystal originating particles and other types of bulk silicon defects.
With 20 years experience in pioneering epitaxy services, IQE works closely with its customers to develop the ideal substrate solution. Epitaxial services for MEMS applications include thick virtual SiGe substrates, thin super lattice structures, SiGe etch stop layers and SiGe epitaxy for applications such as IR sensors.
The new MEMS offering also includes the industry's largest range of materials capabilities with multi-layer Si, SiGe and Ge epitaxy. Different doping levels and species within each layer can also be accommodated as can epitaxial layers on SOI.
Alistair Hoy, Sales Manager for IQE's Silicon Products Division said: "Tailor made substrates that are tuned to customers' specific requirements provide the ideal foundation for next generation MEMS products and avoids the need for compromising design processes to fit the substrates' properties. "Many key players are turning to engineered substrates to facilitate greater flexibility and control over their design and manufacturing processes. The use of epitaxial layers opens up an exciting new range of possibilities for the MEMS technology sector."
