News Article
Pushing Float Zone Crystal Pulling
Raw wafer producer Wacker Siltronic has developed a float zone pulling process for 200mm silicon ingots.
Raw wafer producer Wacker Siltronic has developed a float zone pulling process for 200mm silicon ingots. For many years the limit for this crystal growing process was seen as 150mm. Samples are available and volume production is planned for the beginning of 2003.
The large wafers used in IC production are usually grown using the Czochralski (CZ) crystal pulling technique. However, discrete devices often need the superior resistivity performance and reduced defect levels of float zone silicon. These devices are used for power supply and protection functions along with RF and detector applications. CZ wafers with a diameter of 200mm have been available since the 1980s.
