News Article
Technologies And Devices (TDI) Has Demonstrated Production Of 50mm Diameter
Technologies and Devices (TDI) has demonstrated production of 50mm diameter
GaN templates with p-type electrical conductivity. GaN is the compound
semiconductor material used for the fabrication of blue spectrum (blue,
green, and ultraviolet and white) light emitting diodes (LEDs), laser diodes
(LDs) and high-frequency/high-power transistors. Up to now n-type GaN
material technology has seen progress, but lack of a cost effective thick
p-type material has hampered development and commercial availability of many
types of advanced devices.
The p-type GaN template consists of a sapphire substrate and high quality,
highly doped, thick p-type GaN epitaxial layering that is grown by hydride
vapour phase epitaxy (HVPE). The concentration of electrical carriers
(holes) in the GaN layer can be varied in a wide range from 1E16/cm3 to
1E18/cm3.
TDI is planning to move p-type GaN templates into large-volume production in
Q1 2003. The company has already begun shipping test samples of the p-type
GaN templates to prospective customers.
highly doped, thick p-type GaN epitaxial layering that is grown by hydride
vapour phase epitaxy (HVPE). The concentration of electrical carriers
(holes) in the GaN layer can be varied in a wide range from 1E16/cm3 to
1E18/cm3.
TDI is planning to move p-type GaN templates into large-volume production in
Q1 2003. The company has already begun shipping test samples of the p-type
GaN templates to prospective customers.