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Applied Nanotech (ANI) Is To Deliver A Phase II Small Business Innovation
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The ten critical areas for extreme ultraviolet (EUV) lithography, according
to participants at the first Internation Symposium on Extreme Ultraviolet
Lithography, are, in order of priority:
* source output power
* defect-free multilayer mask blank manufacturing
* source and condenser optics/reliability
* cost of ownership of EUV lithography
* defect-free patterned mask manufacturing and commercial availability
* reticle defect protection
* effective contamination control of optical path
* high NA optics manufacturing
* thermal management for reticle and projection optics at high throughput
* simultaneously achieving resolution, sensitivity, line edge roughness and
low outgassing for commercial EUV photo resists
The second International EUVL Symposium will be held September 30-October 2,
2003, Antwerp, Belgium.
to participants at the first Internation Symposium on Extreme Ultraviolet
Lithography, are, in order of priority:
* source output power
* defect-free multilayer mask blank manufacturing
* source and condenser optics/reliability
* cost of ownership of EUV lithography
* defect-free patterned mask manufacturing and commercial availability
* reticle defect protection
* effective contamination control of optical path
* high NA optics manufacturing
* thermal management for reticle and projection optics at high throughput
* simultaneously achieving resolution, sensitivity, line edge roughness and
low outgassing for commercial EUV photo resists
The second International EUVL Symposium will be held September 30-October 2,
2003, Antwerp, Belgium.