News Article
Aixtron Says It Has Demonstrated MOCVD Processes
Aixtron says it has demonstrated MOCVD processes for multi-wafer 200mm GaAs
substrates with outstanding performance for the first time ever, Extensive
numerical modeling enabled the existing AIX 2600 G3 reactor to be upscaled
for 200mm use. Substrates from Freiberger Compound Materials were used in
the demonstration. Uniformities at the 1% level are reported across the
entire 200mm wafer. Material quality and homogeneity do not differ from
results obtained on the well established 150mm systems. Already several AIX
2600G3 systems have been installed at customers for the production of SiGe
epi structures, using multiple 200mm substrates.
Aixtron says it has demonstrated MOCVD processes for multi-wafer 200mm GaAs
substrates with outstanding performance for the first time ever, Extensive
numerical modeling enabled the existing AIX 2600 G3 reactor to be upscaled
for 200mm use. Substrates from Freiberger Compound Materials were used in
the demonstration. Uniformities at the 1% level are reported across the
entire 200mm wafer. Material quality and homogeneity do not differ from
results obtained on the well established 150mm systems. Already several AIX
2600G3 systems have been installed at customers for the production of SiGe
epi structures, using multiple 200mm substrates.
substrates with outstanding performance for the first time ever, Extensive
numerical modeling enabled the existing AIX 2600 G3 reactor to be upscaled
for 200mm use. Substrates from Freiberger Compound Materials were used in
the demonstration. Uniformities at the 1% level are reported across the
entire 200mm wafer. Material quality and homogeneity do not differ from
results obtained on the well established 150mm systems. Already several AIX
2600G3 systems have been installed at customers for the production of SiGe
epi structures, using multiple 200mm substrates.
