IBM has developed RF MEMS (micro-electro-mechanial system) resonator and filter components, aiming at the wireless market. The company says it has used standard production materials and a low-temperature BiCMOS compatible fabrication process (no more than 400C). IBM believes device manufacturers could roll out wireless devices integrated with such MEMS components in

Germany's X-FAB Semiconductor Foundries has added a 0.35micron CMOS process
family (XC035) to its capability, available immediately. Comprehensive
design kits (for Cadence, Verilog, Vital and Synopsys) come with both
standard and worst-case simulation models. The new technology is aimed at
digital and mixed-signal applications with options for one or two poly
layers and three or four metal layers. The architecture of the I/O
structures allows for implementation in 3.3V applications, as well as
conventional 5V circuitry. Additional process options such as low-voltage
and EEPROM are also available and will be supported in design kits in the
near future. More analogue options for high-voltage, integrated Flash and RF
will be added over the next two years.

National Semiconductor has produced a Pentium-class single-chip processor in
a 40mm thermally enhanced plastic ball grid array (PBGA) package. The use of
plastic packaging without a heatsink was enabled through reducing the
maximum power consumption of the SCX200 Geode device. Applications aimed at
include interactive set-top boxes, thin clients and consumer devices. The
components include a Geode GX1 32-bit x86 compatible processor; a TV video
(SC1200, SC1210), TFT (SC2200) or CRT (SC3200) outputs; a memory controller;
a graphics controller; video input and output ports; core logic with support
for PCI, USB and IDE devices; and a super I/O block.

ChipPAC has engineered five stacked memory chips in a chip scale package
(CSP) only 1.4mm thick. The module includes two Flash chips, along with an
SRAM, PSRAM and spacer chip. ChipPAC is offering volume production of
stacked chips at its South Korea and China manufacturing sites. The company
introduced a 1.4mm thick three-stacked package last year and is already
developing a six-stacked CSP in the same profile with 75micron thick dies.

SI Diamond Technology (SIDT) subsidiary Applied Nanotech (ANI) has
prototyped hydrogen sensors based on nanotechnology. The sensors consist of
sub-100nm elements. The sensitivity range is claimed to include hydrogen
levels ranging from 1% to 100% at room temperature with a reaction time of a
few seconds. ANI is currently developing sensor sensitivity for 10 to 1000
parts per million range for hydrogen and in parallel is aiming to generate
stability/lifetime data. The circuitry operates at less than 1mW.

Sarnoff is to extend its TakeCharge technology to 70nm and 65nm CMOS and
65nm silicon-on-insulator (SOI) devices. TakeCharge is designed to lead to
improved electrostatic discharge (ESD) protection with smaller IC dies.
Current TakeCharge licensees include Toshiba New Japan Radio and Hynix
(formerly Hyundai MicroElectronics).

NVE has been awarded a United States Air Force Research Laboratory contract
for $1.125m to develop advanced magnetic random access memories (MRAMs) over
the next two years. Magnetic memory, which retains data when power is
removed, has important military applications in terms of immunity to power
and radiation-induced failures.