News Article
Intel Will Conduct Microprocessor RandD At The Universitat Polittecnica De
Intel will conduct microprocessor R&D at the Universitat Polittecnica de
Catalunya (UPC) in Barcelona, Spain. The Intel Labs Barcelona (ILB) research
centre will be operated by UPC on behalf of Intel. Intel's microprocessor
researchers will collaborate with researchers from UPC on technologies for
future Itanium (64-bit) and Pentium (32-bit) processor family designs in
terms of performance, power consumption and battery life.
The centre will be
led by three professors from UPC: Antonio Gonzalez, Roger Espasa and Toni
Juan.
US researchers have developed room temperature ferromagnetic semiconductors
using molecular beam epitaxy (MBE) to make a digital alloy of several
monolayers (typically 12ML) of gallium antimonide and a 0.5ML of manganese
(GaSb/Mn). The Curie point (the temperature under which a material becomes
ferromagnetic) is more than 400K (260C). The conduction properties of the
semiconductor is metallic with holes as the carrier (Fermi level in the
valence band).
The work was carried out at the University at Buffalo (part of the State
University of New York), the University of Notre Dame and Pennsylvania State
University. The research is to be published in Applied Physics Letters.
"This is the first report in the literature of any material that exhibits
hysteresis in ferromagnetic semiconductors at and above room temperature,"
claims Hong Luo from Buffalo and an author of the research. The team hopes
to use the material to create spin transistors.
Korean scientists have also found room temperature ferromagnetism in a
chromium doped gallium nitride (GaN) single crystal (Applied Physics
Letters, June 3, p4187). The Curie temperature is given as 280K. The
research was carried out by the universities of Pusan and Ulsan and Korea's
Basic Science Institute.
led by three professors from UPC: Antonio Gonzalez, Roger Espasa and Toni
Juan.
US researchers have developed room temperature ferromagnetic semiconductors
using molecular beam epitaxy (MBE) to make a digital alloy of several
monolayers (typically 12ML) of gallium antimonide and a 0.5ML of manganese
(GaSb/Mn). The Curie point (the temperature under which a material becomes
ferromagnetic) is more than 400K (260C). The conduction properties of the
semiconductor is metallic with holes as the carrier (Fermi level in the
valence band).
The work was carried out at the University at Buffalo (part of the State
University of New York), the University of Notre Dame and Pennsylvania State
University. The research is to be published in Applied Physics Letters.
"This is the first report in the literature of any material that exhibits
hysteresis in ferromagnetic semiconductors at and above room temperature,"
claims Hong Luo from Buffalo and an author of the research. The team hopes
to use the material to create spin transistors.
Korean scientists have also found room temperature ferromagnetism in a
chromium doped gallium nitride (GaN) single crystal (Applied Physics
Letters, June 3, p4187). The Curie temperature is given as 280K. The
research was carried out by the universities of Pusan and Ulsan and Korea's
Basic Science Institute.
