Young Infineon Scientist Almost Doubles Chip Speed Record
Chips based on this work could be used to make lower-cost, higher-performance devices for PC and mobile communication networks, automobiles and industrial equipment.
Up to now, 40Gbit/s data rates were only feasible with SiGe (silicon germanium) or with the complex and expensive “III-V” process technologies such as GaAs (gallium arsenide) or InP (indium phosphide).
Infineon has a dedicated sponsorship programme to help young scientists create new chip technology. Infineon's High Frequency Research department currently employs five other PhD students in addition to Kehrer. The team cooperates closely with the technical universities of Vienna and Cottbus as well as with the University of Bochum. The company makes state-of-the-art circuit technologies available to talented students that would otherwise be unavailable to them in university departments.
Major applications of the new chip technology are also expected in wired communications. In this field, the market for 10Gbit/s systems is currently being developed, but the speed margin that can be achieved with the 40Gbit/s chips will result in a significant reduction of power consumption in next-generation devices.
For the record run, the circuitry was optimised and the integrated components packed as densely as possible. To do this, the specific characteristics of each component were examined in depth and fully customised for the circuit in terms of speed and reduced power consumption.
Infineon says the demonstrated research work represents a breakthrough success in the further development of components that are currently implemented as discrete designs using separate SiGe RF and pure silicon CMOS logic chips.
