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  • STMicroelectronics claims that its new Page Flash offers the worlds most advanced smartcard memory technology.
  • Epson Europe Electronics and Swedish Advanced Technology Systems (Swats) are developing a smartcard with integrated display.
  • Philips Electronics is aiming at the market for the industrys highest-speed DVD+R/RW (DVD+Recordable/ReWriteable)
  • Infineon Technologies is pushing "multi-threaded execution"
  • Texas Instruments has produced a 64Mbit ferroelectric RAM (FRAM) chip
  • US company SiidTech has signed a joint technology development agreement with Japans Hitachi ULSI Systems to combine their respective semiconductor identification technologies.
  • STMicroelectronics claims that its new Page Flash offers the worlds most
    advanced smartcard memory technology.
    Page Flash aims to remove the need for
    EEPROM (electrically erasable programmable read-only memory) in high memory
    density smartcard chips.
    A smartcard technology demonstrator combines a 32-bit secure microcontroller
    with 1MByte of Flash memory. This demonstrator was developed within the
    European Union MEDEA+ project [email protected] and codenamed ST22FJ1M.
    EEPROM offers program/erase speeds of a few milliseconds but requires a
    relatively high voltage (18V) to be applied during the write process. New
    smaller process generations make it increasingly difficult to design devices
    that can withstand 18V, limiting EEPROM scalability.
    Page Flash is a derivative of standard Flash technology. Standard Flash
    offers large sector erasure in around 1s and fast programming of about
    10microsecs. Page Flash offers the same fast programming time as Standard
    Flash but also allows individual data words (32-bits) to be erased in a few
    milliseconds and to rewritten more than 100,000 times.
    The two types of Flash can be mixed on the same chip at no additional cost
    and without any modification to the standard Flash manufacturing process.
    At the beginning of 2003, the concepts developed and validated on the
    ST22FJ1M demonstrator will be used to create a range of products based upon
    the ST22 core with Flash/Page Flash.


    Epson Europe Electronics and Swedish Advanced Technology Systems (Swats) are
    developing a smartcard with integrated display. The Swats DisplayCard will
    use an electrophoretic dotmatrix display.

    "Our development team is currently working on the production machine which
    will manufacture the display cards," reports Olov Holst, executive
    vice-president of Swats. "The production process is patented. We are in
    negotiation with some of the largest card manufacturers in the world
    regarding a license agreement, and plan mass production of the Swat
    DisplayCard to start in 2004."
    The first project will be a bank card that allows customers to see their
    balance and transaction record.


    Philips Electronics is aiming at the market for the industrys highest-speed
    DVD+R/RW (DVD+Recordable/ReWriteable) recorders with a package including a
    chipset, optical pickup unit (OPU), firmware and reference design.
    The DVD
    design incorporates new technology to minimise recording errors caused by
    common disk defects such as fingerprints. The software and chipset is based
    on Philips Nexperia streaming media technology. The reference spec would
    allow creation of 4.7GByte DVDs in less than 15 minutes - or half the time
    of existing drives, says Philips.
    The chipset includes a PNX7850 main processor, a TZA1039 analogue processor
    and a TZA1047 laser power controller. The entire system is designed to work
    with Philips OPU66.20. A sample kit including the chipset and OPU is
    available now. The kit will cost $65 each in volumes of 100,000 units.
    Volume production is scheduled for Q1, 2003.


    Infineon Technologies is pushing "multi-threaded execution" as a means to
    increase the performance of embedded computing without going to higher
    performance chips.
    Embedded processors are used in mobile phone, PDAs,
    peripherals, automobiles and other consumer applications. Multi-threading,
    says Infineon, will enable embedded system designers to "jump over the
    limitations of Moores Law and achieve up to a 10x increase in the
    efficiency of new processors".
    Multi-threading was developed for high performance computer systems and is
    being applied by Intel to its latest high performance microprocessor chips.
    Infineon says it has developed a series of innovations that make it possible
    to use multi-threading in the lower performance domain of embedded systems
    (microcontrollers, microprocessors, digital signal processors). This is
    achieved while maintaining or even improving the real-time determinism
    needed for embedded systems. Infineons first application will be in a
    32-bit microcontroller planned for introduction in the middle of next year.
    The company also plans licensing the technology to others.
    Multi-threading creates a series of multiple "virtual processors" on one
    physical device - when one task (such as a memory access) is forced to wait,
    another takes over. Infineon sees multi-threading as being particularly
    useful in reducing memory cost, allowing slower devices to be used more
    often. Other improvements available from multi-threading include systems
    running at lower speed and lower power consumption.


    Texas Instruments has produced a 64Mbit ferroelectric RAM (FRAM) chip within
    a standard CMOS logic process.
    TI says FRAM has advantages over other
    embedded memory options in terms of manufacturing costs and power
    consumption.
    TI also claims that the device has the smallest FRAM cells ever reported, a
    mere 0.54microns2. The test chips were produced using the companys standard
    130nm, copper-interconnect process with only two additional mask steps. At
    the 90nm process node - the generation where TIs first embedded FRAM
    products are expected to appear - the FRAM cells will be even smaller, a
    mere 0.35microns2. The capacitor is formed using iridium electrodes and a
    thin lead zirconate titanate (PZT) ferroelectric layer.
    In August of 2001, TI made a multi-million dollar FRAM memory licensing and
    development agreement with US ferroelectric memory developer Ramtron
    International. Additional technical details on TIs FRAM technology will be
    presented during the International Electron Devices Meeting (IEDM), December
    8-11, 2002, San Francisco, California.


    US company SiidTech has signed a joint technology development agreement with
    Japans Hitachi ULSI Systems to combine their respective semiconductor
    identification technologies.
    Both companies have independent technology
    based on the random parametric variations that occur during semiconductor
    manufacturing.
    Each company will develop semiconductor intellectual property (SIP) products
    for applications ranging from semiconductor manufacturing yield enhancement
    and die tracking, to smart ID, security and authentication, and encryption.
    SiidTechs "Silicon Fingerprinting" process is delivered in the form of a
    hard IP cell that occupies a space of about 100x100microns in a standard
    0.18micron CMOS process. The unique identification number (or Silicon
    Fingerprint) is produced without any extra programming steps.
    Hitachi ULSI becomes the exclusive marketer and distributor for both
    companies products and services to semiconductor and systems houses in
    Asia. Hitachi ULSI will also have a licensing agreement for all SiidTechs
    SIP. The first products from the joint work are to be available by mid 2003.
    Semiconductor identification technology allows tracking of chips after their
    incorporation into larger assemblies or system products. Such a tracking
    capability can be used to identify defective ICs or assemblies/systems by
    providing a means to identify the particular part and its manufacturing
    history and/or channel of distribution. At semiconductor-manufacturing
    sites, the technology can be used to contribute to yield improvement by
    providing means to investigate and analyse failure modes for particular ICs.

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