News Article
SiGe BiCMOS From Austria
austriamicrosystems announced availability of its 0.35µm SiGe BiCMOS process, which is based on its 0.35µm CMOS mixed-signal base technology licensed from TSMC. The process offers high-speed 70GHz heterojunction bipolar (HBT) transistors. A variety of options include 5V I/O transistors, high precision linear capacitors metal2/metal3 (MIM), poly1/poly2 (PIP) capacitors and resistive poly. The company is aiming at high performance RF applications up to 20Gbit/s.
austriamicrosystems announced availability of its 0.35µm SiGe BiCMOS process, which is based on its 0.35µm CMOS mixed-signal base technology licensed from TSMC. The process offers high-speed 70GHz heterojunction bipolar (HBT) transistors. A variety of options include 5V I/O transistors, high precision linear capacitors metal2/metal3 (MIM), poly1/poly2 (PIP) capacitors and resistive poly. The company is aiming at high performance RF applications up to 20Gbit/s.
The process is available for design now, with volume wafer processing scheduled to begin Q1 2003.
austriamicrosystems has also made available an electrostatic discharge (ESD) consulting service for foundry customers, to ensure maximum on-chip ESD robustness. Electrostatic discharge events can destroy chips. A significant ESD protection challenge occurs in high-frequency applications and in the area of high-voltage/high-current applications where commonly used ESD prevention techniques are not applicable. austriamicrosystems provides solutions for ESD protection also in these areas.
