Trikon Technologies has produced a new module for a high rate, anisotropic, deep silicon etch processes for the fabrication of micro-electro-mechanical systems (MEMS). The etch process was developed by Germanys Robert Bosch.

The DSi module is based on Trikons patented M0RI helicon plasma source. Because silicon etching is strongly dependent on the partial pressure of reactive species and the gas flow, the module has been specifically designed so as to promote highly efficient gas dissociation and operation at a higher pressure than conventional helicon sources. In this regime, the flow of reactive neutrals dominates over diffusion, with high etch rates resulting. Trikon recently licensed the process from Robert Bosch. Etch rates up to 17microns/min can be achieved (10microns/min including polymer deposition steps). A prototype DSi module is available on Trikons Omega 201 etcher. Production versions on the Omega fxP cluster tool are expected early in 2003.