Process Development
MIS develops processes and chemical formulations for CO2-based process solutions. The joint development agreement focuses on the delivery systems of semiconductor grade CO2 at supercritical pressures and sub-fab systems for chemical blending, pressure and temperature control before delivery to the process tools. Additional systems for CO2 recycling and waste recovery are an integral part of the delivery technology. BOC Edwards has full commercial responsibility. The initial applications for supercritical CO2 include wafer drying, cleaning and photoresist strip. The advantage of the supercritical fluid is that it can penetrate the fine features of sub-90nm structures, perform the required cleaning or drying function and vacate the features in preparation for the next process step. These processes need high purity CO2 at pressures ranging from 40 to 200bar. Since CO2 has to now been little used in the fab, new infrastructure is needed. BOC Edwards has the exclusive rights to products derived from Micells intellectual property (IP) and jointly developed IP in wafer cleaning, stripping and drying.
AMD and IBM have agreed to jointly develop future chip-making technologies. The new processes will be aimed at improving microprocessor performance and reducing power consumption. The work will be based on advanced structures and materials such as high-speed silicon-on-insulator (SOI) transistors, copper interconnects and improved low-k dielectrics. The agreement includes collaboration on 65 and 45nm processes.
AMD and chief scientist Bill Siegle reports: "We are set to commence production of our 90nm solutions in Q4 2003, so we are now expanding process-technology development efforts for our next generation of processors targeted at 65nm and below." The companies expect first products based on the new 65nm technology to appear in 2005. The development will be supported by AMD and IBM engineers working at IBMs Semiconductor Research and Development Center (SRDC) in East Fishkill, New York. Work is expected to begin by January 30, 2003.
SIMOX wafer company Ibis Technology has made a joint development agreement with IBM. The objective of the agreement is to develop an enhanced, modified low-dose (MLD) process for the manufacture of SIMOX silicon on insulator (SOI) wafers. Work will be conducted at both Ibis and IBM to produce lower-cost, higher quality SIMOX-SOI wafers with thinner top silicon layers.
