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Communicant Launches 0.25micron SiGe:C Design Kit

Communicant Semiconductor Technologies announced immediate availability of its 0.25micron carbon-doped silicon germanium (SiGe:C) BiCMOS design kit. The process offers three heterobipolar NPN transistors with transition frequencies (fT) from 80GHz to 30GHz and maximum oscillation frequencies (fMAX) from 90GHz to 70GHz at voltages of 2.4V to 7.0V.
Communicant Semiconductor Technologies announced immediate availability of its 0.25micron carbon-doped silicon germanium (SiGe:C) BiCMOS design kit. The process offers three heterobipolar NPN transistors with transition frequencies (fT) from 80GHz to 30GHz and maximum oscillation frequencies (fMAX) from 90GHz to 70GHz at voltages of 2.4V to 7.0V.


The standard four-layer metal process - including all three SiGe:C bipolars, high quality passives; MIM capacitor, varactors and inductors - is manufactured with only 19 photolithography masking steps. Reducing the number of masks makes it the most cost effective high performance BiCMOS process available.


The high speeds achieved by this technology cater to the needs of broadband communications and storage networking. Lower noise and lower power consumption versus CMOS can also be achieved.


Ana Hunter, vice president of U.S. operations, reports: "We are currently able to provide prototyping and bridge capacity through our partner, IHP, and will be transitioning chip manufacturing to the Communicant foundry in 2004."


The design kit is available to all fabless and IDM semiconductor companies in applicable markets. Customer prototype lots will begin in April 2003, with multi-project wafer shuttles scheduled to run every two months thereafter.

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