News Article
R&D
Researchers have used the highly conductive surface layer induced in
diamond by hydrogen termination to create in-plane gate transistors
(Applied Physics Letters, February 10, 2003). Oxidised lines of 100nm
blocked of leakage current down to 0.3pA/micron at 100V at room
temperature.
Researchers have used the highly conductive surface layer induced in
diamond by hydrogen termination to create in-plane gate transistors
(Applied Physics Letters, February 10, 2003). Oxidised lines of 100nm
blocked of leakage current down to 0.3pA/micron at 100V at room
temperature.
diamond by hydrogen termination to create in-plane gate transistors
(Applied Physics Letters, February 10, 2003). Oxidised lines of 100nm
blocked of leakage current down to 0.3pA/micron at 100V at room
temperature.
Scientists from Intel, the University of California Berkeley and the
Lawrence Berkeley, Lawrence Livermore and Sandia US national laboratories
report characterisation of extreme ultraviolet (EUV) lithography down to
70nm equal line/space and even 50nm (Journal of Vacuum Science &
Technology, November 2002, p.2829).
