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Hynix Details Ferroelectric Memory

Tuesday 11th March 2003

Hynix Semiconductor introduced what it says is commercially applicable FeRAM (ferroelectric RAM) - a non-volatile, low power, high-density and high-speed memory. Hynix has used the ferroelectric material BLT (bismuth lanthanum titanate).
Hynix Semiconductor introduced what it says is commercially applicable FeRAM (ferroelectric RAM) - a non-volatile, low power, high-density and high-speed memory. Hynix has used the ferroelectric material BLT (bismuth lanthanum titanate).


The company has available 4Mbit and 8Mbit densities produced on a 0.25micron process technology. The FeRAM samples operate at 3V with data access times of 70nsecs and are capable of 100bn read/write repetitions.



Unlike existing products that are composed of two transistors and two capacitors, FeRAM uses a one transistor, one capacitor (1T1C) cell structure. Hynix device can operate on lower than 1Volt, exceeding traditional FeRAM limitations.



The technology is expandable to 64Mbit without additional development costs, says Hynix.



The Korean company has applied for more than 150 US patents for FeRAM technologies. The company is looking to mobile and multimedia applications including handsets, PDAs, smart phones and smart cards.



Hynix is present details of its FeRAM at the 15th ISIF (International Symposium on Integrated Ferroelectrics) conference today.

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