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Silicon Carbide Device Patent

RF IC supplier Sirenza Microdevices has received a US patent for a "Microwave Field Effect Transistor Structure on Silicon Carbide" No. 6,521,923. This is Sirenzas first patent for the "silicon on silicon carbide" (SiSiC) class of semiconductors.
RF IC supplier Sirenza Microdevices has received a US patent for a "Microwave Field Effect Transistor Structure on Silicon Carbide" No. 6,521,923. This is Sirenzas first patent for the "silicon on silicon carbide" (SiSiC) class of semiconductors.


The patent concerns a new structure for 1-4GHz devices that offer high power microwave performance beyond that currently available from any other semiconductor technology. Sirenza plans to use this new patented device structure with other improvements in future power amplifier module products targeting the wireless infrastructure market.


Pablo DAnna, director of LDMOS technology for Sirenza, comments: "This innovation makes possible a new class of semiconductors demonstrating significant improvement in saturated output power, in power-added efficiency and in power gain over current state-of-the-art LDMOS devices. Additionally, this technology can lead to major reductions in thermal resistance, resulting in lower junction temperatures and enhanced long term device reliability."


Chief technology officer Joe Johnson believes that SiSiC may be enable use of "standard, low-cost silicon processing, unlike other more exotic competing technologies".

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