Infineon Technologies and Chinas Semiconductor Manufacturing International have signed an agreement to expand co-operation on production of standard memory (DRAMs). Under the terms of the additional agreement, Infineon will transfer its 0.11micron DRAM trench technology and 300mm wafer know-how to SMIC. In return, SMIC will manufacture products in this technology exclusively for Infineon. Infineon expects to increase its overall capacity by 15,000 wafer starts per month through SMIC’s 300mm plant, which is currently being built in Beijing. In December 2002, the two companies signed an agreement whereby SMIC would manufacture memory chips in its 200mm plant in Shanghai using Infineon’s 0.14micron DRAM trench technology exclusively for Infineon. Following ramp-up at Beijing, the additional 300mm wafer starts to the 20,000 in 200mm will result in a total capacity of 58,000 wafer starts in 200mm wafer equivalents. First products from the new 300mm plant are expected for summer 2004.

Infineon Technologies and Chinas Semiconductor Manufacturing International have signed an agreement to expand co-operation on production of standard memory (DRAMs). Under the terms of the additional agreement, Infineon will transfer its 0.11micron DRAM trench technology and 300mm wafer know-how to SMIC. In return, SMIC will manufacture products in this technology exclusively for Infineon.
Infineon expects to increase its overall capacity by 15,000 wafer starts per month through SMIC's 300mm plant, which is currently being built in Beijing. In December 2002, the two companies signed an agreement whereby SMIC would manufacture memory chips in its 200mm plant in Shanghai using Infineon's 0.14micron DRAM trench technology exclusively for Infineon. Following ramp-up at Beijing, the additional 300mm wafer starts to the 20,000 in 200mm will result in a total capacity of 58,000 wafer starts in 200mm wafer equivalents. First products from the new 300mm plant are expected for summer 2004.