News Article
Low-leakage Schottky Rectifiers
Diodes Incorporated has developed an ultra-low leakage, high voltage Schottky barrier rectifier process.
Diodes Incorporated has developed an ultra-low leakage, high voltage Schottky barrier rectifier process. The new process is expected to allow development of Schottky barrier rectifiers having reverse breakdown voltage ratings of up to 200V.
Leakage currents are said to be low enough to suit many high efficiency switch-mode power supply (SMPS) applications such as adaptors, desktops and servers. The low forward voltage drop of the Schottky barrier rectifier makes it more efficient than traditional P-N junction devices such as ultra-fast recovery rectifiers. In addition, the lower forward drop of the Schottky device results in lower heat dissipation, which allows for greater miniaturisation of portable products.
The new products are also expected to have broad appeal in automotive applications where the low breakdown voltage of traditional Schottkys is not suitable due to temporary high voltage transients coming from inductive elements such as fans, solenoids and alternators.
Leakage currents are said to be low enough to suit many high efficiency switch-mode power supply (SMPS) applications such as adaptors, desktops and servers. The low forward voltage drop of the Schottky barrier rectifier makes it more efficient than traditional P-N junction devices such as ultra-fast recovery rectifiers. In addition, the lower forward drop of the Schottky device results in lower heat dissipation, which allows for greater miniaturisation of portable products.
The new products are also expected to have broad appeal in automotive applications where the low breakdown voltage of traditional Schottkys is not suitable due to temporary high voltage transients coming from inductive elements such as fans, solenoids and alternators.
