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Pseudo SRAM Available At 32Mbit

The CellularRAM co-development team of Cypress Semiconductor, Infineon Technologies and Micron Technology announced availability of 32Mbit CellularRAM devices for wireless handsets. Samples are available in both asynchronous and burst modes.
The CellularRAM co-development team of Cypress Semiconductor, Infineon Technologies and Micron Technology announced availability of 32Mbit CellularRAM devices for wireless handsets. Samples are available in both asynchronous and burst modes.


CellularRAM is a multi-generation family of low-power pseudo-static RAM (PSRAM). The devices are designed to meet growing memory and bandwidth demands of future 2.5G and 3G handset designs by offering a lower cost/bit ratio than current solutions. CellularRAM has the same voltage range, package, and ball assignment, with asynchronous low-power SRAMs currently used in cell phone designs.


Each company is manufacturing products using their own design and process technologies and product development timetables. In addition to 32Mbit density components, the co-development roadmap includes plans for 16Mbit and 64Mbit.


Micron is currently sampling the 32Mbit and 64Mbit devices, with full production expected in Q3 2003. Infineon is currently sampling the 32Mbit with full production also expected in Q3 2003. Cypress plans to have samples available in H1 2004.


The 32Mbit samples currently available operate at up to 104MHz clock rates with low initial latency of 70ns and can achieve up to 208MByte/s (1.5Gbit/s) of peak bandwidth. These devices emulate popular standard burst READ and WRITE modes including the Intel W18 and Micron Flash Burst-compatible protocol with various I/O voltage options.


CellularRAM co-development members are jointly working on the definition of the next CellularRAM generation - a 128Mbit device, targeted for sampling in H2 2004.

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