Wednesday 1st January 2003
The SHUTTLELINE Mission is to provide our entry-level and R&D customers with the world’s most cost effective solution for their thin-film etching and dielectric deposition requirements. All SHUTTLELINE process chambers are vacuum loadlocked. Years of experience show process-chamber isolation is necessary in order to guarantee repeatable performance. This is as true in the lab as it is in manufacturing.
Process technologies available on the SHUTTLELINE include inductively coupled plasma (ICP) etching, reactive ion etching (RIE), plasma enhanced chemical vapour deposition (PECVD) and high density plasma (microwave) etching (HDP).
In addition to the deposition of thin films including SiO2, Si3N4 and SiOxNy, Unaxis Semiconductors addresses etching requirements over a broad variety of materials. The following is a partial listing of materials for which starting-point etch processes exist:
Dielectrics – SiO2, Si3N4, Al2O3, AlTiC, photoresist, polyimide
Metals – Al, Cr, molybdenum, Ti, W, Ta
Semiconductors – Si, SiC, TaSi
Compound Semiconductors – GaAs, InP, AlGaAs, InGaP, InSb, GaN
Due to the built-in flexibility of the SHUTTLELINE, its process technologies find applications in many markets for various device types including heterojunction bipolar (HBT) and high electron mobility (HEMT) transistors, surface acoustic wave (SAW) devices, lasers, gratings, lenses, LEDs and waveguides, along with implementation of the Bosch process for various micro-electro-mechanical system (MEMS) applications.