News Article
An Aixtron Tricent MOCVD Reactor Has Been Installed At The University Of
An Aixtron Tricent MOCVD reactor has been installed at the University of
Magdeburg's new cleanroom facility for non-volatile memory material
research. Magdeburg and Aixtron plan joint research activities on new
precursors and related physical properties for the materials strontium
bismuth tantalate (SBT) and lead zirconium tantalate (PZT) for future
non-volatile ferroelectric memory (FeRAM) applications. Such memories would
combine the ultra-fast read/write times of DRAMs with the non-volatile
properties of EEPROMs.
US company LIGHTCONNECT reports an increase in its variable optical
attenuator (VOAs) production by 300% in the last quarter. The company says
that this is in response to a surge in demand for the company's recently
launched Fast VOA 4000 by several leading optical systems manufacturers. The
Fast VOA product line has a 40dB attenuation range, blocking the
transmission of light when no voltage is applied. Attenuation is reduced as
the applied voltage is increased. The Fast VOA 4000 has met the reliability
requirements listed in the Telcordia 1209 and 1221 telecoms standards.
Intel has been performing initial beta testing and certification of software
designed to provide rapid diagnosis and yield ramping of logic products at a
facility in California. The software was developed by Electroglas subsidiary
EGsoft in partnership with International SEMATECH, Intel and Texas A&M
University. The solution aims to expedite location of the physical origins
of electrical faults in random-logic IC designs. The project is funded by
International SEMATECH.
Scientists from Sweden's ABB Group and from the DeBeers Industrial Diamonds
business based in the UK have grown high purity diamond layers on industrial
synthetic diamond substrates using a chemical vapour depostion (CVD)
process. Electron and drift mobilities were measured at 4500cm2/Vsec and
3800cm2/Vsec respectively. For silicon, these quantities have values less
than 1400cm2/Vsec and 450cm2/Vsec, respectively.
Japanese researchers from the NTT telephone company and Tokai University
have grown carbon nanotube networks on 100nm scale silicon pillars using
methane CVD. Nearest neighbour bridging accounted for 80% of the nanotube
connections.
A scientist from MEMSCAP is claiming a new high-k candidate, according to
Peter Clarke on the Semiconductor Business News website. MEMSCAP chief
scientist Lionel Girardie created layers with an equivalent oxide thickness
of 9Angstroms. The material is based on an alloy of aluminium oxide, hafnium
oxide nanolayers with lathanide and praseodumium doping produced in atomic
layer deposition. MEMSCAP is interested in metal-insulator-metal capacitor
applications. Girardie is collaborating with a foundry to develop the
material for use in a 130nm process. The research has yet to be presented at
a conference or in peer reviewed form.
attenuator (VOAs) production by 300% in the last quarter. The company says
that this is in response to a surge in demand for the company's recently
launched Fast VOA 4000 by several leading optical systems manufacturers. The
Fast VOA product line has a 40dB attenuation range, blocking the
transmission of light when no voltage is applied. Attenuation is reduced as
the applied voltage is increased. The Fast VOA 4000 has met the reliability
requirements listed in the Telcordia 1209 and 1221 telecoms standards.
Intel has been performing initial beta testing and certification of software
designed to provide rapid diagnosis and yield ramping of logic products at a
facility in California. The software was developed by Electroglas subsidiary
EGsoft in partnership with International SEMATECH, Intel and Texas A&M
University. The solution aims to expedite location of the physical origins
of electrical faults in random-logic IC designs. The project is funded by
International SEMATECH.
Scientists from Sweden's ABB Group and from the DeBeers Industrial Diamonds
business based in the UK have grown high purity diamond layers on industrial
synthetic diamond substrates using a chemical vapour depostion (CVD)
process. Electron and drift mobilities were measured at 4500cm2/Vsec and
3800cm2/Vsec respectively. For silicon, these quantities have values less
than 1400cm2/Vsec and 450cm2/Vsec, respectively.
Japanese researchers from the NTT telephone company and Tokai University
have grown carbon nanotube networks on 100nm scale silicon pillars using
methane CVD. Nearest neighbour bridging accounted for 80% of the nanotube
connections.
A scientist from MEMSCAP is claiming a new high-k candidate, according to
Peter Clarke on the Semiconductor Business News website. MEMSCAP chief
scientist Lionel Girardie created layers with an equivalent oxide thickness
of 9Angstroms. The material is based on an alloy of aluminium oxide, hafnium
oxide nanolayers with lathanide and praseodumium doping produced in atomic
layer deposition. MEMSCAP is interested in metal-insulator-metal capacitor
applications. Girardie is collaborating with a foundry to develop the
material for use in a 130nm process. The research has yet to be presented at
a conference or in peer reviewed form.
