News Article
Ibis Technology Has Been Granted A Korean Patent For Its MagScan Magnetic
Ibis Technology has been granted a Korean patent for its MagScan magnetic
scanning technology used in Ibis' oxygen implanters for SIMOX silicon on
insulator (SOI) wafers. MagScan provides a method for scanning a high
current beam quickly (150Hz) and with a very precisely controlled waveform.
This technology enables improved uniformity in the final wafers.
SIMOX implants are performed with wafers heated to 400-600C, unlike normal
doping applications. Ibis has also developed both in-vacuum heat lamps and
special wafer holders for use with this high temperature process. Several
patents on the wafer holders have been granted. A US patent on the lamp
assembly is pending. Ibis also holds a patent on both the basic concept and
on the technology for measurement and control regarding the ambient
background gas present in the end station process chamber.
IXYS has filed a patent infringement lawsuit against Advanced Power
Technology. IXYS claims that that Advanced Power Technology infringes two
key patents (Nos.5,486,715 and 5,801,419), both entitled "High Frequency MOS
Device". The patents make claims concerning IXYS' structure and fabrication
of high performance power MOSFETs.
doping applications. Ibis has also developed both in-vacuum heat lamps and
special wafer holders for use with this high temperature process. Several
patents on the wafer holders have been granted. A US patent on the lamp
assembly is pending. Ibis also holds a patent on both the basic concept and
on the technology for measurement and control regarding the ambient
background gas present in the end station process chamber.
IXYS has filed a patent infringement lawsuit against Advanced Power
Technology. IXYS claims that that Advanced Power Technology infringes two
key patents (Nos.5,486,715 and 5,801,419), both entitled "High Frequency MOS
Device". The patents make claims concerning IXYS' structure and fabrication
of high performance power MOSFETs.
